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Short-Channel Effect Limitations on High-Frequency Operation of AlGaN/GaN HEMTs for T-Gate Devices

✍ Scribed by Jessen, G.H.; Fitch, R.C.; Gillespie, J.K.; Via, G.; Crespo, A.; Langley, D.; Denninghoff, D.J.; Trejo, M.; Heller, E.R.

Book ID: 111687150
Publisher: IEEE
Year: 2007
Tongue: English
Weight: 737 KB
Volume: 54
Category: Article
ISSN: 0018-9383
DOI: 10.1109/ted.2007.904476

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