High Johnson’s figure of merit (8.32 THz·V) in 0.15-µm conventional T-gate AlGaN/GaN HEMTs on silicon

✍ Scribed by Ranjan, Kumud; Arulkumaran, Subramaniam; Ng, Geok Ing; Vicknesh, Sahmuganathan

• Book ID: 121876848
• Publisher: Institute of Pure and Applied Physics
• Year: 2014
• Tongue: English
• Weight: 838 KB
• Volume: 7
• Category: Article
• ISSN: 1882-0778
• DOI: 10.7567/APEX.7.044102