Trilevel reactive ion etching processes
✦ LIBER ✦
Fabrication of high aspect ratio symmetric and asymmetric T-shaped gates for high frequency pseudomorphic HEMTs
✍ Scribed by E. Lopez; A. Marten; A. Forchel; J.L. Caceres; H. Nickel; W. Schlapp; R. Lösch
- Publisher
- Elsevier Science
- Year
- 1990
- Tongue
- English
- Weight
- 281 KB
- Volume
- 11
- Category
- Article
- ISSN
- 0167-9317
No coin nor oath required. For personal study only.
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