## Abstract In this letter, a low‐voltage and low‐power 3.5‐GHz low noise amplifier (LNA) is designed and fabricated using TSMC 0.18‐μm MS/RF complementary metal‐oxide‐semiconductor field effect transistor (CMOS) technology. The complementary current‐reused topology is utilized to achieve low dc po
Design of a low-power 3.5-GHz broad-band CMOS transimpedance amplifier for optical transceivers
✍ Scribed by Hasan, S.M.R.
- Book ID
- 118280048
- Publisher
- IEEE
- Year
- 2005
- Tongue
- English
- Weight
- 947 KB
- Volume
- 52
- Category
- Article
- ISSN
- 1057-7122
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## Abstract In this article, we demonstrate a miniaturized high‐linearity (IIP3 = 8 dBm at 4 GHz) 3–5‐GHz ultrawideband low‐noise amplifier (LNA) implemented in a standard 0.18‐μm CMOS technology. The inductive‐series peaking technique was used to enhance the gain and bandwidth performances of the
## Abstract A concurrent 2.4/5.2‐GHz dual‐band monolithic low‐noise amplifier implemented with a 0.18‐μm mixed‐signal CMOS technology is reported for the first time. This LNA only consumed 3‐mW power, and achieved minimum noise figures of 3.3 and 3.26 dB and 2.4 and 5.2 GHz, respectively. Input and