A 0.9V CMOS 3-5 Ghz broadband flat gain low-noise amplifier for ultra-wide band receivers
✍ Scribed by Alavi-Rad, H.; Ziabakhsh, S.; Ziabakhsh, S.; Yagoub, M. C. E.
- Book ID
- 121280148
- Publisher
- IEEE
- Year
- 2013
- Tongue
- English
- Weight
- 513 KB
- Volume
- 36
- Category
- Article
- ISSN
- 0840-8688
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## Abstract A 3–6 GHz broadband CMOS single‐ended LNA fabricated with the 0.18 μm 1P6M process for UWB and WLAN receiver is presented. Due to its noncascode circuit architecture, the proposed LNA can operate under 1V supply voltage and 6mA current consumption. In the UWB low band (3.1–5.15 GHz), th
## Abstract In this letter, a low‐voltage and low‐power 3.5‐GHz low noise amplifier (LNA) is designed and fabricated using TSMC 0.18‐μm MS/RF complementary metal‐oxide‐semiconductor field effect transistor (CMOS) technology. The complementary current‐reused topology is utilized to achieve low dc po
## Abstract A concurrent 2.4/5.2‐GHz dual‐band monolithic low‐noise amplifier implemented with a 0.18‐μm mixed‐signal CMOS technology is reported for the first time. This LNA only consumed 3‐mW power, and achieved minimum noise figures of 3.3 and 3.26 dB and 2.4 and 5.2 GHz, respectively. Input and