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Design and Characterization of Current-Assisted Photonic Demodulators in 0.18- CMOS Technology

โœ Scribed by Betta, G.D.; Donati, S.; Hossain, Q.D.; Martini, G.; Pancheri, L.; Saguatti, D.; Stoppa, D.; Verzellesi, G.


Book ID
114620447
Publisher
IEEE
Year
2011
Tongue
English
Weight
469 KB
Volume
58
Category
Article
ISSN
0018-9383

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This paper presents the design of high-voltage NMOS and PMOS devices with shallow trench isolation (STI) in standard 0.25 mm/5 V CMOS technology. Breakdown voltages of 20 V for n-channel device with a specific on resistance of 1.06 mO cm 2 and ร€20 V for p-channel device with a specific on resistance