✦ LIBER ✦

Characterization of Active Pixel Sensors fabricated in CMOS 0.18 μm technology

✍ Scribed by D. Passeri; A. Marras; D. Biagetti; P. Placidi; P. Delfanti; L. Servoli; G.M. Bilei

Book ID: 108223286
Publisher: Elsevier Science
Year: 2007
Tongue: English
Weight: 636 KB
Volume: 582
Category: Article
ISSN: 0168-9002
DOI: 10.1016/j.nima.2007.07.113

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

CMOS active pixel image sensors fabricat

CMOS active pixel image sensors fabricated using a 1.8-V, 0.25-μm CMOS technology

✍ Wong, H.P.; Chang, R.T.; Crabbe, E.; Agnello, P.D. 📂 Article 📅 1998 🏛 IEEE 🌐 English ⚖ 200 KB

A monolithic active pixel sensor for par

A monolithic active pixel sensor for particle detection in 0.25 μm CMOS technology

✍ J.J. Velthuis; P.P. Allport; G. Casse; A. Evans; R. Turchetta; G. Villani 📂 Article 📅 2006 🏛 Elsevier Science 🌐 English ⚖ 234 KB

Optimum bias of power transistor in 0.18

Optimum bias of power transistor in 0.18 μm CMOS technology for Bluetooth application

✍ Heng-Ming Hsu; Tai-Hsing Lee 📂 Article 📅 2006 🏛 Elsevier Science 🌐 English ⚖ 243 KB

High linearity technique for ultra-wideb

High linearity technique for ultra-wideband low noise amplifier in 0.18 μm CMOS technology

✍ A.I.A. Galal; R. Pokharel; H. Kanaya; K. Yoshida 📂 Article 📅 2012 🏛 Elsevier Science 🌐 English ⚖ 847 KB

Scaling potential of pin-type 3-D SBT fe

Scaling potential of pin-type 3-D SBT ferroelectric capacitors integrated in 0.18 μm CMOS technology

✍ L. Goux; D. Maes; J.G. Lisoni; H. Vander Meeren; V. Paraschiv; L. Haspeslagh; C. 📂 Article 📅 2006 🏛 Elsevier Science 🌐 English ⚖ 281 KB

A 24-GHz VCO using active FET frequency

A 24-GHz VCO using active FET frequency doubler in 0.18-μm CMOS technology

✍ X.-S. Chen; Y.-T. Chen; C.-L. Lu; H.-R. Chuang 📂 Article 📅 2009 🏛 John Wiley and Sons 🌐 English ⚖ 429 KB

## Abstract In this article, a 24‐GHz VCO composed of a 12‐GHz VCO and an active frequency doubler is presented. This work is implemented by using the 0.18‐μm 1P6M CMOS process. The VCO and active frequency doubler with a 1.5 V supply consume 30 mA. The phase noise of measurement is −107.5 dBc/Hz a

Characterization of Active Pixel Sensors fabricated in CMOS 0.18&#xa0;μm technology

Characterization of Active Pixel Sensors fabricated in CMOS 0.18 μm technology