Depth profiling using secondary ion mass spectrometry and sample current measurements
β Scribed by A. B. Tolstoguzov; U. Bardi; S. P. Chenakin
- Book ID
- 110202838
- Publisher
- Pleiades Publishing
- Year
- 2007
- Tongue
- English
- Weight
- 227 KB
- Volume
- 1
- Category
- Article
- ISSN
- 1027-4510
No coin nor oath required. For personal study only.
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## Abstract Depth profiles obtained using secondary ion mass spectrometry with O~2~^+^ primary ions and without sample rotation have been measured for Mgβimplanted GaAs, Bβ and ^2^Hβimplanted bulk Mo, a deposited Ni/SiO~2~ interface and for a molecularβbeamβepitaxyβgrown structure consisting of mon
The possibilities of measuring depth profiles by secondary ion mass spectrometry are evaluated. The influence of different instrumental and experimental parameters on depth resolution in the profiles are studied: the effects of primary ion beam characteristics, reactive gas adsorption and mechanical