๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

Ultra shallow secondary ion mass spectrometry depth profiling: Limitation of sample rotation in improving depth resolution

โœ Scribed by C.M Ng; A.T.S Wee; C.H.A Huan; A See

Book ID
114164934
Publisher
Elsevier Science
Year
2001
Tongue
English
Weight
134 KB
Volume
179
Category
Article
ISSN
0168-583X

No coin nor oath required. For personal study only.

๐Ÿ“œ SIMILAR VOLUMES

Sample rotation during depth profiling w
Sample rotation during depth profiling with secondary ion mass spectrometry
โœ John J. Vajo; Eun-Hee Cirlin ๐Ÿ“‚ Article ๐Ÿ“… 1991 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 809 KB

## Abstract Depth profiles obtained using secondary ion mass spectrometry with O~2~^+^ primary ions and without sample rotation have been measured for Mgโ€implanted GaAs, Bโ€ and ^2^Hโ€implanted bulk Mo, a deposited Ni/SiO~2~ interface and for a molecularโ€beamโ€epitaxyโ€grown structure consisting of mon

Application of sample rotation to second
Application of sample rotation to secondary ion mass spectrometry depth profiling of aluminum metallization
โœ F. A. Stevie; J. L. Moore ๐Ÿ“‚ Article ๐Ÿ“… 1992 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 483 KB

## Abstract Aluminum films sputterโ€deposited on silicon have been analyzed using secondary ion mass spectrometry with sample rotation during O~2~^+^ ion bombardment. Sample rotation prevented bombardmentโ€induced topography formation and associated loss of depth resolution. Analysis of silicon and b