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Ion-induced topography, depth resolution, and ion yield during secondary ion mass spectrometry depth profiling of a GaAs/AlGaAs superlattice: Effects of sample rotation

โœ Scribed by Cirlin, Eun-Hee


Book ID
126835203
Publisher
AVS (American Vacuum Society)
Year
1991
Tongue
English
Weight
910 KB
Volume
9
Category
Article
ISSN
0734-2101

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Application of sample rotation to second
โœ F. A. Stevie; J. L. Moore ๐Ÿ“‚ Article ๐Ÿ“… 1992 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 483 KB

## Abstract Aluminum films sputterโ€deposited on silicon have been analyzed using secondary ion mass spectrometry with sample rotation during O~2~^+^ ion bombardment. Sample rotation prevented bombardmentโ€induced topography formation and associated loss of depth resolution. Analysis of silicon and b