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Depth profiling of ultrathin films using medium energy ion scattering

✍ Scribed by Joonkon Kim; W.N Lennard; C.P McNorgan; J Hendriks; I.V Mitchell; D Landheer; J Gredley

Book ID
108497026
Publisher
Elsevier Science
Year
2003
Tongue
English
Weight
293 KB
Volume
3
Category
Article
ISSN
1567-1739

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## Abstract The depth strain profile in silicon from the Si (001) substrate to the surface of a 2 nm thick Si/12 nm thick SiGe/bulk Si heterostructure has been determined by medium energy ion scattering (MEIS). It shows with sub‐nanometer resolution and high strain sensitivity that the thin Si cap