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High-resolution depth profiling of ultrathin gate oxides using medium-energy ion scattering

✍ Scribed by T Gustafsson; H.C Lu; B.W Busch; W.H Schulte; E Garfunkel

Book ID
114164550
Publisher
Elsevier Science
Year
2001
Tongue
English
Weight
489 KB
Volume
183
Category
Article
ISSN
0168-583X

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## Abstract The depth strain profile in silicon from the Si (001) substrate to the surface of a 2 nm thick Si/12 nm thick SiGe/bulk Si heterostructure has been determined by medium energy ion scattering (MEIS). It shows with sub‐nanometer resolution and high strain sensitivity that the thin Si cap