๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

Depth profile analysis and study of the electronic properties of silicon nitride layers produced by ion implantation

โœ Scribed by A. Markwitz; M. Arps; H. Baumann; E.F. Krimmel; K. Bethge


Book ID
113287360
Publisher
Elsevier Science
Year
1996
Tongue
English
Weight
412 KB
Volume
113
Category
Article
ISSN
0168-583X

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โœ Shigeo Ohira; Masaya Iwaki ๐Ÿ“‚ Article ๐Ÿ“… 1989 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 652 KB

Recent advances in high dose ion implantation The surface properties such as depth profile, techniques have produced silicon-on-insulator chemical bond and structure, and electrical prop-(SOI) substrates for the fabrication of electronic erties of oxide and nitride layers in aluminium devices. Oxyge