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Depth dependence of defect density and stress in GaN grown on SiC

✍ Scribed by Faleev, N.; Temkin, H.; Ahmad, I.; Holtz, M.; Melnik, Yu.

Book ID: 124089791
Publisher: American Institute of Physics
Year: 2005
Tongue: English
Weight: 298 KB
Volume: 98
Category: Article
ISSN: 0021-8979
DOI: 10.1063/1.2141651

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