✦ LIBER ✦
Dependence of the stress–temperature coefficient on dislocation density in epitaxial GaN grown on α-Al2O3 and 6H–SiC substrates
✍ Scribed by Ahmad, I.; Holtz, M.; Faleev, N. N.; Temkin, H.
- Book ID
- 118067489
- Publisher
- American Institute of Physics
- Year
- 2004
- Tongue
- English
- Weight
- 352 KB
- Volume
- 95
- Category
- Article
- ISSN
- 0021-8979
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