Non-polar relaxed cubic GaN was grown by molecular beam epitaxy (MBE) on nano-patterned 3C-SiC/Si (0 0 1) substrates with negligible hexagonal content and less defect density than in planar cubic GaN layers. Nano-patterning of 3C-SiC/Si (0 0 1) is achieved by self-ordered colloidal masks for the fir
✦ LIBER ✦
Formation of defects in cubic GaN grown on nano-patterned 3C-SiC (001)
✍ Scribed by R. M. Kemper; M. Häberlen; T. Schupp; M. Weinl; M. Bürger; M. Ruth; C. Meier; T. Niendorf; H. J. Maier; K. Lischka; D. J. As; J. K. N. Lindner
- Book ID
- 112182193
- Publisher
- John Wiley and Sons
- Year
- 2012
- Tongue
- English
- Weight
- 829 KB
- Volume
- 9
- Category
- Article
- ISSN
- 1862-6351
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