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Deposition of Iridium Thin Films Using New IrI CVD Precursors

✍ Scribed by Y.-L. Chen; C.-S. Liu; Y. Chi; A. J. Carty; S.-M. Peng; G.-H. Lee


Publisher
John Wiley and Sons
Year
2002
Tongue
English
Weight
455 KB
Volume
8
Category
Article
ISSN
0948-1907

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tantalum alkoxides, can be used as a precursor to grow tantalum oxide thin films by CVD for device application. Using this precursor, a Ta 2 O 5 film with a thickness of 180 nm had a leakage current density below 1 Β΄10 Β±8 A cm Β±2 for an electric field strength of 2 MV cm Β±1 , and a breakdown voltage