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Degradation of metal/oxide/semiconductor structures by Fowler-Nordheim tunnelling injection

โœ Scribed by B. Balland; C. Plossu; S. Bardy

Publisher
Elsevier Science
Year
1987
Tongue
English
Weight
748 KB
Volume
148
Category
Article
ISSN
0040-6090

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๐Ÿ“œ SIMILAR VOLUMES

Fowler-Nordheim Current Oscillations Ana
Fowler-Nordheim Current Oscillations Analysis of Metal/Ultra-Thin Oxide/Semiconductor Structures
โœ Khlifi, Y. ;Kassmi, K. ;Roubi, L. ;Maimouni, R. ๐Ÿ“‚ Article ๐Ÿ“… 2000 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 200 KB

In this paper we present results concerning the modeling of oscillations in the I-V g characteristics (V g < 0), of metal/ultra-thin oxide/semiconductor (MOS) structures where the oxide thickness is 45 A. From the theoretical models of the literature we have shown that the modeling of oscillations c