Voltage shifts of Fowler-Nordheim tunneling J-V plots in thin gate oxide MOS structures due to trapped charges : S. J. Oh and Y. T. Yeow. Solid-St. Electron. 32(6), 507 (1989)

• Publisher: Elsevier Science
• Year: 1990
• Tongue: English
• Weight: 132 KB
• Volume: 30
• Category: Article
• ISSN: 0026-2714
• DOI: 10.1016/0026-2714(90)90528-u