Generation-annealing of oxide and interface traps at 150 and 298 K in oxidized silicon stressed by Fowler-Nordheim electron tunneling : Charles Ching-Hsiang Hsu and C. Tang Sah. Solid-St. Electron. 31, 1003 (1988)

• Publisher: Elsevier Science
• Year: 1989
• Tongue: English
• Weight: 129 KB
• Volume: 29
• Category: Article
• ISSN: 0026-2714
• DOI: 10.1016/0026-2714(89)90289-8