Generation-annealing of oxide and interface traps at 150 and 298 K in oxidized silicon stressed by Fowler-Nordheim electron tunneling

✍ Scribed by Charles Ching-Hsiang Hsu; C.Tang Sah

• Publisher: Elsevier Science
• Year: 1988
• Tongue: English
• Weight: 493 KB
• Volume: 31
• Category: Article
• ISSN: 0038-1101
• DOI: 10.1016/0038-1101(88)90399-1