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Defects in SiO2 in buried-oxide structures formed by O+ implantation

✍ Scribed by R.C. Barklie; T.J. Ennis; P.L.F. Hemment; K. Reeson


Book ID
113279045
Publisher
Elsevier Science
Year
1988
Tongue
English
Weight
401 KB
Volume
32
Category
Article
ISSN
0168-583X

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## Abstract Luminescent phenomenon, especially electroluminescence (EL), is studied for two samples with a structure of Si/SiO~2~/Si prepared by oxygen implantation. The asymmetry of EL found in this structure is attributed to the electrical asymmetry of these samples. Several luminescent spots can