Luminescence in Si/SiO2/Si structure formed by oxygen implantation

✍ Scribed by Shen, Zhonghan ;Wu, Changliang ;Lu, Qian ;Zhang, Xin ;Wu, Xiao-Jing

• Book ID: 105364414
• Publisher: John Wiley and Sons
• Year: 2007
• Tongue: English
• Weight: 355 KB
• Volume: 204
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/pssa.200723038

✦ Synopsis

Abstract

Luminescent phenomenon, especially electroluminescence (EL), is studied for two samples with a structure of Si/SiO~2~/Si prepared by oxygen implantation. The asymmetry of EL found in this structure is attributed to the electrical asymmetry of these samples. Several luminescent spots can be observed at the exact same positions under both positive and negative bias, and their area density is about 10^2^/cm^2^ in these samples. Photoemission microscope (PEM) and optical beam induced resistance change (OBIRCH) are used for the study of EL phenomenon before and after electrical breakdown of the samples, while transmission electron microscope (TEM) is used for the study of the sample's structure. Nc‐Si (nanocrystal silicon) related peaks cannot be found in photoluminescence (PL) spectra for the sample containing Si islands, while oxygen defect related peaks between 350–650 nm can be found for all samples. Luminescence mechanism is discussed based on the model of defect luminescent center (DLC). (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)