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Defect reduction mechanisms in the nanoheteroepitaxy of GaN on SiC

✍ Scribed by Sun, X. Y.

Book ID: 126305920
Publisher: American Institute of Physics
Year: 2004
Tongue: English
Weight: 757 KB
Volume: 95
Category: Article
ISSN: 0021-8979
DOI: 10.1063/1.1639952

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