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Defect diffusion during ion implantation into GaAs

โœ Scribed by Wilk, E. ;Wesch, W. ;Hehl, K.

Publisher
John Wiley and Sons
Year
1983
Tongue
English
Weight
243 KB
Volume
76
Category
Article
ISSN
0031-8965

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## Abstract GaAs doping superlattices were implanted with 0.5 MeV hydrogen ions at doses ranging from 10^12^ to 10^16^ cm^โ€“2^. This gradually modified their optical characteristics from superlattice behaviour to something resembling the bulk material and beyond. Ellipsometry and near infrared refle