๐”– Bobbio Scriptorium
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Sputtering during ion implantation into gallium arsenide

โœ Scribed by C. R. Fritzsche; W. Rothemund


Publisher
Springer
Year
1975
Tongue
English
Weight
516 KB
Volume
7
Category
Article
ISSN
1432-0630

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Data is presented which shows that both forward and back sputtering can be the cause of heavy metal surface contamination of samples during ion implantation. Rutherford backscattering is used to show that contamination levels can be in excess of 1 and 0.02% of the implanted dose for forward and back