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Use of ion-induced X-rays to locate ion-implanted impurities in gallium arsenide

✍ Scribed by M. Takai; K. Gamo; H. Yagita; K. Masuda; S. Namba; A. Mizobuchi

Publisher: Elsevier Science
Year: 1978
Weight: 254 KB
Volume: 149
Category: Article
ISSN: 0029-554X
DOI: 10.1016/0029-554x(78)90908-4

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967. Non-rectifying contacts to gallium

967. Non-rectifying contacts to gallium arsenide obtained by the method of ion implantation: V P Belevskiy et al, Prib Tekh Eksper, No 6, Nov–Dec 1970, 203–204 (in Russian)

📂 Article 📅 1971 🏛 Elsevier Science 🌐 English ⚖ 134 KB