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Ion implantation of silicon in gallium arsenide: Damage and annealing characterizations

✍ Scribed by D. Pribat; D. Dieumegard; M. Croset; C. Cohen; R. Nipoti; J. Siejka; G.G. Bentini; L. Correra; M. Servidori

No coin nor oath required. For personal study only.

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