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Lattice defects in ion implanted GaAs

✍ Scribed by Pashov, N. ;Vitali, G. ;Kalitzova, M. ;Rossi, M.


Publisher
John Wiley and Sons
Year
1995
Tongue
English
Weight
519 KB
Volume
150
Category
Article
ISSN
0031-8965

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## Abstract GaAs doping superlattices were implanted with 0.5 MeV hydrogen ions at doses ranging from 10^12^ to 10^16^ cm^–2^. This gradually modified their optical characteristics from superlattice behaviour to something resembling the bulk material and beyond. Ellipsometry and near infrared refle