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Defect tuning of GaAs doping superlattices by hydrogen ion implantation

✍ Scribed by Brink, D. J. ;Haile, K. M. ;Kunert, H. W.


Publisher
John Wiley and Sons
Year
2005
Tongue
English
Weight
173 KB
Volume
202
Category
Article
ISSN
0031-8965

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✦ Synopsis


Abstract

GaAs doping superlattices were implanted with 0.5 MeV hydrogen ions at doses ranging from 10^12^ to 10^16^ cm^–2^. This gradually modified their optical characteristics from superlattice behaviour to something resembling the bulk material and beyond. Ellipsometry and near infrared reflectance measurements were used to determine the dose dependent effective band gap. Implantation damage could be reversed to a large extent by a simple thermal annealing step. (Β© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)


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