Defect tuning of GaAs doping superlattices by hydrogen ion implantation
β Scribed by Brink, D. J. ;Haile, K. M. ;Kunert, H. W.
- Publisher
- John Wiley and Sons
- Year
- 2005
- Tongue
- English
- Weight
- 173 KB
- Volume
- 202
- Category
- Article
- ISSN
- 0031-8965
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β¦ Synopsis
Abstract
GaAs doping superlattices were implanted with 0.5 MeV hydrogen ions at doses ranging from 10^12^ to 10^16^ cm^β2^. This gradually modified their optical characteristics from superlattice behaviour to something resembling the bulk material and beyond. Ellipsometry and near infrared reflectance measurements were used to determine the dose dependent effective band gap. Implantation damage could be reversed to a large extent by a simple thermal annealing step. (Β© 2005 WILEYβVCH Verlag GmbH & Co. KGaA, Weinheim)
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