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Improvement of the crystallinity and passivation of the defect complex center of neutron-transmutation-doped GaAs by annealing and hydrogenation

✍ Scribed by Shon, Y. ;Kang, T. W. ;Kim, T. W. ;Kim, H. J. ;Shim, H. S. ;Lee, H. G.


Publisher
John Wiley and Sons
Year
1994
Tongue
English
Weight
289 KB
Volume
141
Category
Article
ISSN
0031-8965

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