✦ LIBER ✦

Diffusion and defect annealing in silicon doped by phosphorus ion implantation

✍ Scribed by Titov, V. V.

Publisher: John Wiley and Sons
Year: 1970
Tongue: English
Weight: 400 KB
Volume: 2
Category: Article
ISSN: 0031-8965
DOI: 10.1002/pssa.19700020203

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Diffusion and defect annealing in silico

Diffusion and defect annealing in silicon doped by phosphorus ion implantation: VV Titov, Phys Status Solidi (a), 2 (2), June 1970, 203–209

📂 Article 📅 1971 🏛 Elsevier Science 🌐 English ⚖ 67 KB

Diffusion of ion-implanted phosphorus in

Diffusion of ion-implanted phosphorus in silicon

✍ Chelyadinskii, A. R. ;Taher, H. I. Haki 📂 Article 📅 1994 🏛 John Wiley and Sons 🌐 English ⚖ 425 KB

Modeling of defect–phosphorus pair diffu

Modeling of defect–phosphorus pair diffusion in phosphorus–implanted silicon

✍ Jäger, H. U. ;Feudel, T. ;Ulbricht, S. 📂 Article 📅 1989 🏛 John Wiley and Sons 🌐 English ⚖ 755 KB

Defect production and annealing in ion i

Defect production and annealing in ion implanted silicon carbide

✍ A. Heft; E. Wendler; T. Bachmann; E. Glaser; W. Wesch 📂 Article 📅 1995 🏛 Elsevier Science 🌐 English ⚖ 375 KB

In the present study we investigated damage production and annealing in 6H SiC wafers implanted with 230 keV Ga + ions in a wide dose range at various temperatures. Analysis of the implanted layers was performed by the Rutherford backscattering (RBS) channeling technique and by transmission electron

Dependence of anomalous phosphorus diffu

Dependence of anomalous phosphorus diffusion in silicon on depth position of defects created by ion implantation

✍ S. Solmi; F. Cembali; R. Fabbri; M. Servidori; R. Canteri 📂 Article 📅 1989 🏛 Springer 🌐 English ⚖ 543 KB

Defect annealing in phosphorus implanted

Defect annealing in phosphorus implanted silicon: A D.L.T.S. study

✍ J. Krynicki; J. C. Bourgoin 📂 Article 📅 1979 🏛 Springer 🌐 English ⚖ 307 KB