Defect annealing in phosphorus implanted silicon: A D.L.T.S. study
โ Scribed by J. Krynicki; J. C. Bourgoin
- Publisher
- Springer
- Year
- 1979
- Tongue
- English
- Weight
- 307 KB
- Volume
- 18
- Category
- Article
- ISSN
- 1432-0630
No coin nor oath required. For personal study only.
๐ SIMILAR VOLUMES
In the present study we investigated damage production and annealing in 6H SiC wafers implanted with 230 keV Ga + ions in a wide dose range at various temperatures. Analysis of the implanted layers was performed by the Rutherford backscattering (RBS) channeling technique and by transmission electron
A physically motivated model that accounts for the spatial and temporal evolution of extended defect distribution in ion-implanted Si is presented. Free physical parameters are extracted from experimental data and by means of a genetic algorithm (GA). Transmission electron microscopy (TEM) data and