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Dependence of anomalous phosphorus diffusion in silicon on depth position of defects created by ion implantation

✍ Scribed by S. Solmi; F. Cembali; R. Fabbri; M. Servidori; R. Canteri

Publisher: Springer
Year: 1989
Tongue: English
Weight: 543 KB
Volume: 48
Category: Article
ISSN: 1432-0630
DOI: 10.1007/bf00619395

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