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Deep level transient spectroscopy characterization of defects introduced in p-Si by electron beam deposition and proton irradiation

✍ Scribed by Nyamhere, C; Das, A G M; Auret, F D; C, M Hayes

Book ID: 115315081
Publisher: Institute of Physics
Year: 2008
Tongue: English
Weight: 431 KB
Volume: 100
Category: Article
ISSN: 1742-6588
DOI: 10.1088/1742-6596/100/4/042004

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