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A comparative study of electronic properties of the defects introduced in p-Si: (i) During electron beam deposition of Ti/Mo, (ii) by proton irradiation, and (iii) by electron irradiation

✍ Scribed by A.G.M. Das; C. Nyamhere; F.D. Auret; M. Hayes


Book ID
108278533
Publisher
Elsevier Science
Year
2009
Tongue
English
Weight
273 KB
Volume
203
Category
Article
ISSN
0257-8972

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