✦ LIBER ✦
Characterization of deep level defects in Si irradiated with MeV Ar+ions using constant capacitance time analyzed transient spectroscopy
✍ Scribed by P K Giri; S Dhar; V N Kulkarni; Y N Mohapatra
- Book ID
- 110659434
- Publisher
- Springer-Verlag
- Year
- 1997
- Tongue
- English
- Weight
- 279 KB
- Volume
- 20
- Category
- Article
- ISSN
- 0250-4707
No coin nor oath required. For personal study only.