## Abstract We have used deep level transient spectroscopy to characterize the defects introduced in nโtype, Sbโdoped, Ge during electron beam deposition of different metals for Schottky contact formation. We have found that the relative concentration of the electron beam induced defects depended o
โฆ LIBER โฆ
Electrical characterization of defects introduced in n-Si during electron beam deposition of Pt
โ Scribed by Auret, F. D.; Coelho, S. M. M.; Nel, J. M.; Meyer, W. E.
- Book ID
- 118766399
- Publisher
- John Wiley and Sons
- Year
- 2012
- Tongue
- English
- Weight
- 515 KB
- Volume
- 209
- Category
- Article
- ISSN
- 0031-8965
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