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Electrical characterization of defects introduced during electron beam deposition of Schottky contacts on n-type Ge

✍ Scribed by F.D. Auret; W.E. Meyer; S. Coelho; M. Hayes; J.M. Nel


Publisher
Elsevier Science
Year
2006
Tongue
English
Weight
152 KB
Volume
9
Category
Article
ISSN
1369-8001

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When using Schottky barrier diodes (SBDs) on silicon (Si) to study the thermal stability of radiation-induced defects, point defects injection into the silicon substrate can occur at temperatures where silicidation occurs. These injected point defects can react with the radiation-induced defects and