Thermal stability of Co, Ni, Pt or Ru Sc
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Cloud Nyamhere; A. Chawanda; A.G.M. Das; F.D. Auret; M. Hayes
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Article
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2007
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Elsevier Science
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English
β 264 KB
When using Schottky barrier diodes (SBDs) on silicon (Si) to study the thermal stability of radiation-induced defects, point defects injection into the silicon substrate can occur at temperatures where silicidation occurs. These injected point defects can react with the radiation-induced defects and