Electrical Characterization of Defects Introduced During Sputter Deposition of Schottky Contacts onn-type Ge
โ Scribed by F.D. Auret; S. Coelho; W.E. Meyer; C. Nyamhere; M. Hayes; J.M. Nel
- Book ID
- 107454984
- Publisher
- Springer US
- Year
- 2007
- Tongue
- English
- Weight
- 186 KB
- Volume
- 36
- Category
- Article
- ISSN
- 0361-5235
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## Abstract We have used deep level transient spectroscopy to characterize the defects introduced in nโtype, Sbโdoped, Ge during electron beam deposition of different metals for Schottky contact formation. We have found that the relative concentration of the electron beam induced defects depended o
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