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Deep level transient spectroscopy and TEM analysis of defects in Eu implanted GaN

✍ Scribed by A. Colder; T. Wojtowicz; P. Marie; P. Ruterana; V. Matias; M. Mamor; A. Vantomme; S. Eimer; L. Méchin


Publisher
John Wiley and Sons
Year
2005
Tongue
English
Weight
988 KB
Volume
2
Category
Article
ISSN
1862-6351

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Application of deep-level transient spec
✍ P. Kamiński 📂 Article 📅 1993 🏛 Elsevier Science 🌐 English ⚖ 272 KB

Deep-level transient spectroscopy has been employed for monitoring grown-in point defects in vapour phase epitaxial GaAs06P0.4:Te and GaP:N,S. It is shown that the concentrations of deep electron traps T1 (0.20 eV) and T2 (0.18 eV) in GaA%.tP0.4:Te are dependent on the shallow donor concentration an