Deep etching of silicon carbide for micromachining applications: Etch rates and etch mechanisms
β Scribed by Chabert, P.
- Book ID
- 121849489
- Publisher
- AVS (American Vacuum Society)
- Year
- 2001
- Tongue
- English
- Weight
- 694 KB
- Volume
- 19
- Category
- Article
- ISSN
- 0734-211X
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π SIMILAR VOLUMES
Plasma etching of silicon trenches in a wide range of aspect ratios is studied theoretically and experimentally. A generalized relationship between the process parameters and trench geometry is derived and is verified by reactive ion etching of silicon structures in SF6/O 2 plasma. It is shown that
## Abstract In this work, we used HNO~3~/HF Vapour Etching (VE) of silicon (Si) wafers for the formation of different porous structures. Depending on the volume ratio of the HNO~3~/HF acid mixture, we can obtain Porous Silicon (PS) layers or a (NH~4~)~2~SiF~6~ like powder phase. These two kind of p