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Scaling of silicon trench etch rates and profiles in plasma etching

✍ Scribed by V.F. Lukichev; V.A. Yunkin

Publisher
Elsevier Science
Year
1999
Tongue
English
Weight
850 KB
Volume
46
Category
Article
ISSN
0167-9317

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✦ Synopsis

Plasma etching of silicon trenches in a wide range of aspect ratios is studied theoretically and experimentally. A generalized relationship between the process parameters and trench geometry is derived and is verified by reactive ion etching of silicon structures in SF6/O 2 plasma. It is shown that under certain conditions etched trenches with different widths can be geometrically similar.

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