Cryogenic etching of nano-scale silicon trenches with resist masks
✍ Scribed by Y. Wu; D.L. Olynick; A. Goodyear; C. Peroz; S. Dhuey; X. Liang; S. Cabrini
- Publisher
- Elsevier Science
- Year
- 2011
- Tongue
- English
- Weight
- 646 KB
- Volume
- 88
- Category
- Article
- ISSN
- 0167-9317
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✦ Synopsis
Cryogenic silicon etching using SF 6 -O 2 at the sub-50 nm scale has been developed for nano-electromechanical systems (NEMS) and nano-photonics systems where high aspect ratio trenches are desired. It was found that the SF 6 -O 2 chemistry at cryogenic temperatures (À100 to À130 °C) provides the best combination of etch rate, selectivity, and profile control for the smallest trenches etched. The profile can be well controlled with aspect ratios on the order of 8:1 for 20 nm wide trenches. The various etch parameter trends will be discussed along with methods to achieve the optimal profiles and etch rates.