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Electrochemical etching and profiling of silicon

✍ Scribed by T.S. Horányi; P. Tüttö


Publisher
Elsevier Science
Year
1993
Tongue
English
Weight
306 KB
Volume
63
Category
Article
ISSN
0169-4332

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Plasma etching of silicon trenches in a wide range of aspect ratios is studied theoretically and experimentally. A generalized relationship between the process parameters and trench geometry is derived and is verified by reactive ion etching of silicon structures in SF6/O 2 plasma. It is shown that