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Etching of silicon trenches in CF4 plasma using photoresist/aluminium masks

✍ Scribed by Dr. B. Glück; W. Höppner


Publisher
John Wiley and Sons
Year
1990
Tongue
English
Weight
415 KB
Volume
25
Category
Article
ISSN
0232-1300

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In Situ Monitoring of Silicon Plasma Etc
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## Abstract In etch plasmas used for semiconductor processing, concentrations of the precursor gas NF~3~ and of the etch product SiF~4~ are measured online and in situ using a new diagnostic arrangement, the Q‐MACS Etch system, which is based on quantum cascade laser absorption spectroscopy (QCLAS)