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Application of deep reactive ion etching for silicon angular rate sensor

✍ Scribed by J. Choi; K. Minami; M. Esashi


Publisher
Springer-Verlag
Year
1996
Tongue
English
Weight
803 KB
Volume
2
Category
Article
ISSN
0946-7076

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Advanced etching of silicon based on dee
✍ F. Marty; L. Rousseau; B. Saadany; B. Mercier; O. FranΓ§ais; Y. Mita; T. Bourouin πŸ“‚ Article πŸ“… 2005 πŸ› Elsevier Science 🌐 English βš– 483 KB

Different processes involving an inductively coupled plasma reactor are presented either for deep reactive ion etching or for isotropic etching of silicon. On one hand, high aspect ratio microstructures with aspect ratio up to 107 were obtained on sub-micron trenches. Application to photonic MEMS is