Deconvolution of very low primary energy SIMS depth profiles
β Scribed by B. Fares; B. Gautier; J.C. Dupuy; G. Prudon; P. Holliger
- Publisher
- Elsevier Science
- Year
- 2006
- Tongue
- English
- Weight
- 189 KB
- Volume
- 252
- Category
- Article
- ISSN
- 0169-4332
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π SIMILAR VOLUMES
In this paper, the problem of the deconvolution of SIMS depth proΓles is addressed. In particular, the hypotheses that are necessary for the deconvolution to be possible (in the actual state of the art) in the case of the SIMS signal are reviewed. Then, the principle of regularization, which is a ma
In this paper, an iterative algorithm is used in order to deconvolve some real and simulated SIMS proΓles of boron-doped layers in silicon. The real SIMS proΓles are obtained by the analysis of delta layers of boron-doped silicon in a silicon matrix, analysed in a Cameca IMS3/4f instrument at obliq