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De-excitation mechanisms of Er3+ in Er-doped hydrogenated amorphous silicon prepared by electron cyclotron resonance plasma enhanced chemical vapor deposition

โœ Scribed by Mun-Jun Kim; G.K. Mebratu; Jung H. Shin


Book ID
116667446
Publisher
Elsevier Science
Year
2003
Tongue
English
Weight
294 KB
Volume
332
Category
Article
ISSN
0022-3093

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The paper presents the investigation of the effect of the process parameters on the structure of hydrogenated amorphous carbon (a-C:H) films deposited on Si(100) substrate by electron cyclotron resonance microwave plasma chemical vapor deposition method (ECR-PCVD). The investigation is based on an o