✦ LIBER ✦

DC pulse hot-carrier-stress effects on gate-induced drain leakage current in n-channel MOSFETs

✍ Scribed by Ja-Hao Chen; Shyh-Chyi Wong; Yeong-Her Wang

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Stress induced leakage currents in N-MOS

✍ D Goguenheim; A Bravaix; D Vuillaume; F Mondon; M Jourdain; A Meinertzhagen 📂 Article 📅 1999 🏛 Elsevier Science 🌐 English ⚖ 483 KB

Enhanced degradation of n-MOSFETs with h

✍ Dongwoo Kim; Seonhaeng Lee; Cheolgyu Kim; Chiho Lee; Jeongsoo Park; Bongkoo Kang 📂 Article 📅 2012 🏛 Elsevier Science 🌐 English ⚖ 212 KB

A comprehensive study of hot carrier str

✍ Tahui Wang; Lu-Ping Chiang; Nian-Kai Zous; Charng-Feng Hsu; Li-Yuan Huang; Tien- 📂 Article 📅 1999 🏛 IEEE 🌐 English ⚖ 251 KB

Interface trap effect on gate induced dr

✍ Wang, T.; Chimoon Huang; Chang, T.E.; Chou, J.W.; Chang, C.Y. 📂 Article 📅 1994 🏛 IEEE 🌐 English ⚖ 325 KB

A new hot-carrier induced degradation mo

✍ Masakazu Shimaya; Shigeo Ogawa; Noboru Shiono 📂 Article 📅 1993 🏛 Elsevier Science 🌐 English ⚖ 349 KB

The effect of channel hot-carrier stress

✍ Chen Ih-Chin; Choi Jeong Yeol; Hu Chenming 📂 Article 📅 1988 🏛 IEEE 🌐 English ⚖ 597 KB